SILICON-CARBIDE TRANSISTOR INVERTERS
DOI:
https://doi.org/10.24867/08BE17PlavsicKeywords:
Invertors, semiconductors based on wide-band gap materials, SiСAbstract
General concepts about new types of semiconductors based on wide-band gap materials are given, and silicon carbide (SiC) transistors are specifically addressed. A comparison with silicon components is given and applications in power electronics are presented. A model of SiC inverters and a series of simulations in MATLAB have been developed. The market situation as well as future directions of development are given.
References
[1] http://mikroelektronika.elfak.ni.ac.rs/files/materijali-za-elektroniku/7-poluprovodnici.pdf, Електронски факултет Ниш, 2017.
[2] B. Ahmad, „Wide Band Gap Power Semiconductor Devices and their Applications“, M.Sc. Thesis, Aalto University, Espoo, Finland, 2015.
[3] N. Mohan, T. Undeland, W. Robbins, “Power Elec-tronics”, 3rd Ed., John Wiley and Sons, 2003.
[4] M. Недељковић, С. Срђић, „Енергетски претварачи 1 - Основне топологије енергетских претварача“, Електротехнички факултет, Београд, 2016.
[5] J. Arillaga, Y.H. Liu, N.R. Watson, „Flexible Power Transmission – The HVDC Options“, John Wiley and Sons, 2007.
[6] А. Nordvall „Multilevel Inverter Topology Survey“ Chalmers University оf Technology, Göteborg, Sweden, 2011.
[7] E. Ghiani, F. Pilo “Smart inverter operation in distri-bution networks with high penetration of photovolta-ic system”, Journal of Modern Power Systems and Clean Energy, Vol.3, pp.504-511, 2015.
[8] R. Teodorescu, M. Liserre, P. Rodriguez, „Grid converters for photovoltaic and wind power system“, John Wiley and Sons, 2011.
[9] J.A. Alves, G. da Cunha, P. Torri, „Medium voltage industrial variable speed drives“, Brazil, 2009. https://pdfs.semanticscholar.org/7df6/86b0e46280824d6f39ec313acc2fb5a7b9a1.pdf .
[10] W. Czuchra, W. Mysinski, B. Woszczyna, „Analysis of the use of transistors based on SiC technology in inverters in the context of electromagnetic compati-bility“, Technical Transaction, Electrical Eng., Vol.1-E, 2016, doi: 10.4467/2353737XCT.16.027.5289.
[2] B. Ahmad, „Wide Band Gap Power Semiconductor Devices and their Applications“, M.Sc. Thesis, Aalto University, Espoo, Finland, 2015.
[3] N. Mohan, T. Undeland, W. Robbins, “Power Elec-tronics”, 3rd Ed., John Wiley and Sons, 2003.
[4] M. Недељковић, С. Срђић, „Енергетски претварачи 1 - Основне топологије енергетских претварача“, Електротехнички факултет, Београд, 2016.
[5] J. Arillaga, Y.H. Liu, N.R. Watson, „Flexible Power Transmission – The HVDC Options“, John Wiley and Sons, 2007.
[6] А. Nordvall „Multilevel Inverter Topology Survey“ Chalmers University оf Technology, Göteborg, Sweden, 2011.
[7] E. Ghiani, F. Pilo “Smart inverter operation in distri-bution networks with high penetration of photovolta-ic system”, Journal of Modern Power Systems and Clean Energy, Vol.3, pp.504-511, 2015.
[8] R. Teodorescu, M. Liserre, P. Rodriguez, „Grid converters for photovoltaic and wind power system“, John Wiley and Sons, 2011.
[9] J.A. Alves, G. da Cunha, P. Torri, „Medium voltage industrial variable speed drives“, Brazil, 2009. https://pdfs.semanticscholar.org/7df6/86b0e46280824d6f39ec313acc2fb5a7b9a1.pdf .
[10] W. Czuchra, W. Mysinski, B. Woszczyna, „Analysis of the use of transistors based on SiC technology in inverters in the context of electromagnetic compati-bility“, Technical Transaction, Electrical Eng., Vol.1-E, 2016, doi: 10.4467/2353737XCT.16.027.5289.
Downloads
Published
2020-05-27
Issue
Section
Electrotechnical and Computer Engineering