APPLICATIONS OF MODERN SWITCHING COMPONENTS IN THE POWER ELECTRONICS DEVICES
DOI:
https://doi.org/10.24867/18BE11TakacKeywords:
Silicon, Silicon carbide, power electronicsAbstract
This paper analyzes the disadvantages and advantages of using new generations of switching components in power electronics devices. The analysis was performed by comparing the recorded voltage waveforms and currents of semiconductor components made of silicon and silicon carbide. The influence of DC bus inductance on the voltage of components during switching off, the influence of changing the resistance of the control circuit on the on and off speed as well as the influence of the component material on the on and off speed are shown.
References
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[2] Ashutosh Sharma, Soon Jae Lee, Young Joo Jang and Jae Pil Jung, „SiC based Technology for High Power Electronics and Packaging Applications“, University of Seoul, Korea, 2014.
[3] http://grahamlab.gatech.edu/research-2/ultra-wide-band-gap-semiconductor-materials/
[4] https://www.digikey.sk/en/articles/working-sic-mosfets-challenges-design-recommendations
[5] https://www.tel.com/museum/magazine/material/150327_interview02/index.html
[6] https://www.ulvac.co.jp/wiki/en/sic_powerdevice_2016/
[7] https://www.digikey.dk/da/articles/introduction-to-gan-technology
[8] https://www.power-and-beyond.com/gan-systems-2021-predictions-for-the-power-industry-a-990612/
[9] https://www.powerelectronicsnews.com/10-things-to-know-about-gan/
[10] Andreas Giessmann, „Influence of DC-Link Inductance on Switching Performance and Power Losses“, SEMIKRON International GmbH, 2017.
[11] Branko D. Popović, „Osnovi Elektrotehnike 2“, Akademska misao, Beograd, 2004.
[12] Dr. Ing. Arendt Wintrich, Dr.-Ing. Ulrich Nicolai, Dr. techn. Werner Tursky, Univ.-Prof. Dr.-Ing. Tobias Reimann, „Application Manual Power Semiconductors“, SEMIKRON International GmbH, 2015.
[13] S. Tiwari, O.-M. Midtg˚ard, T. M. Undeland, „SiC MOSFETs for Future Motor Drive Applications“, Norwegian University of Science and Technology
[14] Motonobu Joko, Mitsubishi Electric Corp., Akiko Goto, Mitsubishi Electric Corp., Maki Hasegawa, Mitsubishi Electric Corp., Satoshi Miyahara, Mitsubishi Electric Corp., Haruki Murakami, Mitsubishi Electric Corp., „Snubber circuit to suppress the voltage ringing for SiC device“, PCIM, 2015.
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Published
2022-07-07
Issue
Section
Electrotechnical and Computer Engineering
